GT50J322_06 Toshiba America Electronic Components, Inc., GT50J322_06 Datasheet

GT50J322_06

Manufacturer Part Number

GT50J322_06

Description

Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application

Manufacturer

Toshiba America Electronic Components, Inc.

Datasheet

1.GT50J322_06.pdf (6 pages)

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Current Resonance Inverter Switching Application

Maximum Ratings

Thermal Characteristics

Equivalent Circuit

Enhancement mode type

High speed : t

Low saturation voltage: V

FRD included between emitter and collector

Fourth generation IGBT

TO-3P(N) (Toshiba package name)

Collector-emitter voltage

Gate-emitter voltage

Continuous collector

current

Pulsed collector current

Diode forward current

Collector power

dissipation

Junction temperature

Storage temperature range

Thermal resistance (IGBT)

Thermal resistance (diode)

Gate

Characteristics

= 0.19 µs (typ.) (I

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Collector

Emitter

@ Tc

Pulsed

@ Tc

(Ta = 25°C)

CE (sat)

100°C

25°C

100°C

25°C

= 1.9 V (typ.) (I

= 50A)

Symbol

th (j-c)

GT50J327

GES

CES

stg

55 to 150

= 50A)

Marking

Rating

0.89

Max

600

±25

100

140

150

2.7

°C/W

Unit

GT50J327

°C

TOSHIBA

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

1.Gate

2.Collector(heatsink)

3.Emitter

2-16C1C

GT50J327

2005-02-09

Unit: mm

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