GT50J322_06 Toshiba America Electronic Components, Inc., GT50J322_06 Datasheet - Page 4

• Manufacturer Part Number: GT50J322_06
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
• Manufacturer: Toshiba America Electronic Components, Inc.

1000
0.01
500
400
300
200
100
100
0.1
0.1
10
10
0
1
1
1
1
0
(continuous)
I C max (pulsed) *
I C max
Common emitter
DC operation
V GG
V CC
Tc
I C
V CE
Collector-emitter voltage V
25°C
50 A
80
300 V
15 V
300 V
Gate resistance R
10
200
Gate charge Q
Switching Time – R
Safe Operating Area
100
10
V
CE,
160
10 ms*
V
100
GE
1 ms*
– Q
G
240
10 s*
G
(nC)
100
G
G
( )
CE
1000
Common emitter
*: Single
non-repetitive
pulse Tc
Curves must be
derated linearly
with increases
in temperature.
100 s*
Tc
320
R L
(V)
t off
t on
t r
t f
25°C
6
25°C
10000
1000
400
20
16
12
8
4
0
4
10000
1000
1000
0.01
100
100
0.1
0.1
10
10
10
1
1
1
0
1
Common emitter
Common emitter
V GG
Tc
V CC
f
R G
Tc
V GE
1 MHz
Collector-emitter voltage V
10
25°C
Collector-emitter voltage V
25°C
39
300 V
15 V
0
10
Collector current I
Switching Time – I
t r
Reverse Bias SOA
10
20
t on
C – V
100
30
CE
C
100
t off
40
t f
C
CE
(A)
CE
1000
T j
V GG
R G
(V)
(V)
50
125°C
C oes
C ies
C res
39
GT50J327
20 V
2005-02-09
10000
1000
60