GT50J322_06 Toshiba America Electronic Components, Inc., GT50J322_06 Datasheet - Page 3

• Manufacturer Part Number: GT50J322_06
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
• Manufacturer: Toshiba America Electronic Components, Inc.

100
100
80
60
40
20
80
60
40
20
0
0
4
3
2
1
0
0
0
40
Common emitter
Common emitter
Common emitter
V GE
Tc
Tc
125°C
40°C
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
15 V
1
1
0
Case temperature Tc (°C)
20
V
40
CE (sat)
2
2
I
I
C
C
20
– V
– V
10
CE
CE
– Tc
80
3
3
15
15
10
120
V GE
V GE
I C
4
4
100 A
7 V
7 V
70
50
30
10
9
8
9
8
160
5
5
3
100
100
80
60
40
20
80
60
40
20
0
0
0
0
Common emitter
Common emitter
V CE
Tc
25°C
Collector-emitter voltage V CE (V)
5 V
1
2
Gate-emitter voltage V GE (V)
Tc
20
2
4
I
I
C
C
125°C
– V
– V
CE
GE
25
3
6
15
10
40
V GE
4
8
GT50J327
7 V
2005-02-09
9
8
10
5