GT50J322_06 Toshiba America Electronic Components, Inc., GT50J322_06 Datasheet - Page 5

• Manufacturer Part Number: GT50J322_06
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
• Manufacturer: Toshiba America Electronic Components, Inc.

100
300
60
50
40
30
20
10
50
40
30
20
10
50
30
10
0
0
5
3
1
25
0
1
Common collector
V GE = 0
3
0.4
50
Case temperature
Reverse voltage V
Forward voltage V
5
Tc = 125°C
10
0.8
I
75
C
max – Tc
C
I
F
j
– V
– V
30
F
R
100
1.2
25
Tc
50
R
F
−40
(V)
(V)
100
Common emitter
(°C)
V GE
125
1.6
f = 1 MHz
Tc = 25°C
15 V
300 500
150
2.0
5
10
10
10
200
100
10
10
10
50
30
10
10
5
3
1
0
2
1
0
1
2
3
0
5
t rr
I rr
10
10
4
8
6
4
2
0
4
0
10
I rr
Forward current I
t rr
Pulse width t
3
40
8
r
10
I
th (t)
rr
, t
2
di/dt (A/µs)
I
rr
rr
80
– t
, t
– I
10
rr
w
w
12
F
1
– di/dt
F
(s)
Common collector
120
Common collector
di/dt = 100 A/ s
V GE = 0
Tc = 25°C
10
(A)
Tc = 25°C
I F = 15 A
0
Diode stage
IGBT stage
16
GT50J327
Tc
160
2005-02-09
10
1
25°C
200
10
20
500
300
100
50
30
10
2