GT5J311SM Toshiba America Electronic Components, Inc., GT5J311SM Datasheet
GT5J311SM
Manufacturer Part Number
GT5J311SM
Description
Vces (V) = 600 ;; Ic (A) = 5 ;; Vce (sat) (V) = 2.7 ;; PC (W) = 45 ;; TRR Max (ns) = 200 ;; Package = TO-220SM ;; Main Application = Inverter/ups ;; Feature = Power SMD
Manufacturer
Toshiba America Electronic Components, Inc.
Datasheet
1.GT5J311SM.pdf
(7 pages)
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
MAXIMUM RATINGS
EQUIVALENT CIRCUIT
TENTATIVE
The 3rd Generation
Enhancement−Mode
High Speed
Low Saturation Voltage
FRD included between Emitter and Collector.
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
Emitter−Collector Forward
Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
(Tc = 25°C)
CHARACTERISTIC
GT5J311,GT5J311(SM)
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
(Ta = 25°C)
: t
: V
1ms
1ms
DC
DC
f
CE
= 0.30µs (Max.) (I
(sat) = 2.7V (Max.) (I
SYMBOL
V
V
T
SILICON N CHANNEL IGBT
I
I
P
GES
CES
I
CP
FM
I
T
stg
C
F
C
j
C
= 5A)
−55~150
RATING
600
±20
150
10
10
45
5
5
1
C
= 5A)
UNIT
°C
°C
W
V
V
A
A
A
A
Weight: 1.5g
Weight: 1.4g
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
GT5J311,GT5J311(SM)
2−10S1C
2−10S2C
2002-02-06
―
―
―
―
Unit: mm
Unit: mm
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