MCP1726 Microchip Technology, MCP1726 Datasheet - Page 6

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MCP1726

Manufacturer Part Number
MCP1726
Description
1A Low Voltage / Low Quiescent Current LDO Regulator
Manufacturer
Microchip Technology
Datasheet

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MCP1726
DC CHARACTERISTICS (Continued)
TEMPERATURE SPECIFICATIONS
DS21936B-page 6
Electrical Specifications: Unless otherwise noted, V
C
Boldface type applies for junction temperatures, T
AC Performance
Output Delay From SHDN
Output Noise
Power Supply Ripple Rejection
Ratio
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Note 1:
Electrical Specifications: Unless otherwise indicated, all limits apply for V
Temperature Ranges
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8LD 3 x 3 DFN
Thermal Resistance, 8LD SOIC
IN
= C
2:
3:
4:
5:
6:
7:
OUT
Parameters
The minimum V
V
point output voltage for the adjustable cases. V
TCV
over the temperature range. V
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load
regulation is tested over a load range from 1 mA to the maximum specified output current.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2%
below its nominal value that was measured with an input voltage of V
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air. (i.e., T
mum allowable power dissipation will cause the device operating junction temperature to exceed the maxi-
mum 150°C rating. Sustained junction temperatures above 125°C can impact device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction
temperature over the ambient temperature is not significant.
= 4.7 µF (X7R Ceramic), T
R
is the nominal regulator output voltage for the fixed cases. V
Parameters
OUT
= (V
OUT-HIGH
IN
must meet two conditions: V
– V
OUT-LOW
A
PSRR
Sym
T
T
= +25°C.
e
T
OUT-LOW
OR
SD
N
SD
) *10
Sym
T
T
T
JA
JA
A
J
J
6
is the lowest voltage measured over the temperature range.
J
/ (V
(Note 7) of -40°C to +125°C
Min
IN
R
= (V
Min
-40
-65
* Temperature). V
IN
R
= V
R
2.3V and V
+ 0.5V) or 2.3V, whichever is greater, I
Typ
100
150
2.0
ADJ *
10
54
Typ
150
41
((R
1
Max
/R
IN
+125
+150
+150
R
Max
2
IN
)+1). Figure 4-1.
OUT-HIGH
= 1.2V, 1.8V, etc. V
= 2.3V to 6.0V.
V
R
IN
µV/ Hz I
Units
+ 2.5%
= V
dB
°C
°C
µs
Units
°C/W
°C/W
is the highest voltage measured
A
°C
°C
°C
R
© 2005 Microchip Technology Inc.
, T
+ 0.5V.
J
SHDN = GND to V
V
C
Ceramic), V
f = 100 Hz, C
I
V
C
I
1.8V, V
I
1.8V, V
,
OUT
OUT
OUT
OUT
OUT
INAC
OUT
IN
V
J
Steady State
Transient
4-Layer JC51-7
Standard Board with
vias
4-Layer JC51-7
Standard Board
A
DROPOUT.
= 0 µF
). Exceeding the maxi-
= 200 mA, f = 1 kHz,
= 100 mA,
= 100 µA, V
= 100 µA, V
R
= GND to 95% V
= 1 µF (X7R
= 30 mV pk-pk,
IN
IN
is the desired set
Conditions
Conditions
= 2.8V
= 2.8V
OUT
OUT
OUT
= 1 mA,
= 2.5V
OUT
OUT
= 10 µF,
IN
=
=
R

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