SI9433BDY Vishay Intertechnology, SI9433BDY Datasheet - Page 2

• Manufacturer Part Number: SI9433BDY
• Description: P-channel 20-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Notes
a.
b.
www.vishay.com
2
Si9433BDY
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For design aid only; not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
20
16
12
a
8
4
0
0
Parameter
b
b
b
1
V
DS
b
V
Output Characteristics
GS
− Drain-to-Source Voltage (V)
= 5 thru 3 V
b
b
J
2
= 25_C UNLESS OTHERWISE NOTED)
2.5 V
3
Symbol
V
r
r
I
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
2 V
rr
fs
gs
gd
r
f
g
g
)
)
4
New Product
5
V
I
V
DS
D
DS
^ −1 A, V
= −6 V, V
I
F
V
V
= −20 V, V
V
V
V
V
V
V
DS
DS
= −2.3 A, di/dt = 100 A/ms
GS
GS
I
DS
DS
V
V
S
DS
Test Condition
DS
DD
DD
= −2.6 A, V
v−5 V, V
v−5 V, V
= V
= −4.5 V, I
= −2.7 V, I
= 0 V, V
= −20 V, V
= −9 V, I
= −6 V, R
= −6 V, R
GEN
GS
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
GS
D
= 0 V, T
GS
GS
D
= −250 mA
D
D
GS
GS
= −6.2 A
= "12 V
L
L
= −6.2 A
= −5.0 A
= −4.5 V
= −2.7 V
= 6 W
= 6 W
= 0 V
= 0 V
20
16
12
J
D
8
4
0
= 70_C
= −6.2 A
g
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
T
− Gate-to-Source Voltage (V)
C
1.0
Min
25_C
−0.6
= 125_C
−20
−5
1.5
Typ
0.030
0.050
−0.76
8.8
1.8
2.4
8.5
15
40
55
65
30
35
S-40242—Rev. A, 16-Feb-04
Document Number: 72755
a
2.0
−55_C
Max
"100
0.040
0.060
−1.5
−1.1
−10
100
−1
14
60
85
45
55
2.5
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
A
S
V
3.0