Si9936BDY Vishay Intertechnology, Si9936BDY Datasheet - Page 3

• Manufacturer Part Number: Si9936BDY
• Description: Dual N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72521
S-32411—Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
10
40
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
0.2
GS
Source-Drain Diode Forward Voltage
5
= 6 A
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
2
V
0.4
SD
10
Q
g
− Source-to-Drain Voltage (V)
I
T
− Total Gate Charge (nC)
D
J
0.6
15
= 150_C
− Drain Current (A)
Gate Charge
4
0.8
20
6
1.0
25
T
V
J
GS
= 25_C
= 10 V
1.2
30
8
1.4
35
1.6
40
10
New Product
0.10
0.08
0.06
0.04
0.02
0.00
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
= 6 A
C
5
= 10 V
rss
2
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
10
− Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
50
C
15
C
I
D
oss
iss
= 6 A
Si9936BDY
6
75
20
100
www.vishay.com
8
25
125
150
10
30
3