SI7136DP Vishay Intertechnology, SI7136DP Datasheet
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SI7136DP
Manufacturer Part Number
SI7136DP
Description
R-C Thermal Model Parameters
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7136DP.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7136DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7136DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient
MOSFET.
R-C THERMAL MODEL FOR TANK CONFIGURATION
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73741
Revision 16-Jan-06
R-C VALUES FOR TANK CONFIGURATION
Junction to
Junction to
Thermal
RT1
RT2
RT3
RT4
CT1
CT2
CT3
CT4
Impedance
R-C Thermal Model Parameters
curves
558.7573 m
24.2344 m
70.7495 m
Ambient
Ambient
50.6165
2.0963
9.0488
8.0177
1.4435
Thermal Capacitance (Joules/°C)
for
Thermal Resistance (°C/W)
the
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
690.6627 m
820.2806 m
136.5785 u
595.8486 u
2.3554 m
9.9128 m
8.8712 m
1.6922
Case
Case
Si7136DP_RC
Vishay Siliconix
Foot
Foot
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
www.vishay.com
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