SI7108DN Vishay Intertechnology, SI7108DN Datasheet

SI7108DN

Manufacturer Part Number

SI7108DN

Description

N-channel 20-V (d-s) Fast Switching Mosfet

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7108DN.pdf (6 pages)

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Notes

Document Number: 73216

S-51413—Rev. C, 01-Aug-05

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Avalanche Current

Single Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Maximum Junction to Ambient

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

Surface Mounted on 1” x 1” FR4 Board.

See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the

singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder

interconnection.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Ordering Information: Si7108DN-T1—E3 (Lead (Pb)-Free)

(V)

3.30 mm

0.0061 @ V

0.0049 @ V

N-Channel 20-V (D-S) Fast Switching MOSFET

DS(on)

PowerPAK 1212-8

= 150_C)

Bottom View

Parameter

(W)

= 4.5 V

= 10 V

b, c

19.7

(A)

3.30 mm

Steady State

L = 0 1 mH

L = 0.1 mH

t v 10 sec

= 25_C

= 70_C

= 25_C

= 70_C

(Typ)

Symbol

D TrenchFETr Gen II Power MOSFET for

D New Low Thermal Resistance PowerPAKr

D 100% R

D Synchronous Rectification

D Point-of-Load Converters

D Protection Devices

D Hot Swap

, T

thJC

thJA

stg

Ultra Low On-Resistance

Package with Low 1.07-mm Profile

Tested

10 secs

Typical

17.6

3.2

3.8

2.0

1.9

N-Channel MOSFET

–55 to 150

"16

260

Steady State

Maximum

Vishay Siliconix

11.2

1.3

1.5

0.8

2.4

Si7108DN

www.vishay.com

Unit

_C/W

RoHS

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