SI7214DN Vishay Intertechnology, SI7214DN Datasheet

SI7214DN

Manufacturer Part Number

SI7214DN

Description

Dual N-channel 30-V (d-s) Mosfet

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7214DN.pdf (3 pages)

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CHARACTERISTICS

DESCRIPTION

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 73003

S-60146Rev. B, 13-Feb-06

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS.

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-V to 10-V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

Dual N-Channel 30-V (D-S) MOSFET

The subcircuit

SPICE Device Model Si7214DN

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

Characteristics

model. All model parameter values are optimized

Vishay Siliconix

www.vishay.com

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