Si7392DP Vishay Intertechnology, Si7392DP Datasheet

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Si7392DP

Manufacturer Part Number
Si7392DP
Description
N-channel Reduced Qg, Fast Switching WFET
Manufacturer
Vishay Intertechnology
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7392DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7392DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72165
S-31728—Rev. C, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
30
(V)
N-Channel Reduced Q
8
Ordering Information: Si7392DP-T1
6.15 mm
D
J
J
0.0165 @ V
a
a
0.0115 @ V
= 150_C)
= 150_C)
7
Parameter
Parameter
r
D
DS(on)
6
D
a
a
PowerPAK SO-8
GS
GS
Bottom View
5
a
a
(W)
= 4.5 V
D
= 10 V
a
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
t v 10 sec
T
T
T
T
A
A
A
A
4
I
= 25_C
= 70_C
= 25_C
= 70_C
New Product
G
D
15
13
(A)
g
, Fast Switching WFETt
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJC
I
I
I
DS
GS
D
D
S
D
D
stg
FEATURES
D Extremely Low Q
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D 100% R
APPLICATIONS
D High-Side DC/DC Conversion
Low Switching Losses
Package with Low 1.07-mm Profile
- Notebook
- Server
10 secs
Typical
G
4.1
3.2
3.5
15
12
20
53
5
N-Channel MOSFET
g
Tested
-55 to 150
"20
"50
30
D
S
Steady State
gd
Maximum
Vishay Siliconix
WFET Technology for
1.5
1.8
1.1
4.5
25
70
9
7
Si7392DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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