SI7485DP-T1 Vishay Intertechnology, SI7485DP-T1 Datasheet

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SI7485DP-T1

Manufacturer Part Number
SI7485DP-T1
Description
P-channel 20-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
SI7485DP-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
35 531
Part Number:
SI7485DP-T1-E3
Manufacturer:
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SI7485DP-T1-E3
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Notes
a.
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 20
(V)
J
ti
t A bi
8
6.15 mm
D
Ordering Information: Si7485DP-T1
0.0090 @ V
0.0073 @ V
0.013 @ V
7
J
J
a
a
D
= 150_C)
= 150_C)
t
a
a
r
6
Parameter
Parameter
DS(on)
D
PowerPAK SO-8
Bottom View
GS
5
GS
GS
a
a
D
= - 1.8 V
= - 2.5 V
(W)
= - 4.5 V
P-Channel 20-V (D-S) MOSFET
a
1
S
2
S
3
S
A
5.15 mm
4
= 25_C UNLESS OTHERWISE NOTED)
G
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
- 20
- 18
- 15
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
APPLICATIONS
D Battery Switch for Portable Devices
G
Package with Low 1.07-mm Profile
P-Channel MOSFET
10 secs
Typical
- 16.5
- 4.5
- 20
3.2
1.7
20
54
5
S
D
- 55 to 150
- 20
"8
- 50
Steady State
Maximum
Vishay Siliconix
- 12.5
- 9.5
- 1.6
1.8
1.1
2.2
25
68
Si7485DP
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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