Si7434DP Vishay Intertechnology, Si7434DP Datasheet - Page 3

• Manufacturer Part Number: Si7434DP
• Description: N-channel 250-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72579
S-32408—Rev. A, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.24
0.18
0.12
0.06
0.00
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.8 A
0.2
On-Resistance vs. Drain Current
= 100 V
V
8
7
GS
V
SD
Q
= 6 V
g
− Source-to-Drain Voltage (V)
I
T
0.4
D
− Total Gate Charge (nC)
J
= 150_C
− Drain Current (A)
Gate Charge
16
14
0.6
24
21
0.8
V
GS
T
32
28
J
= 10 V
1.0
= 25_C
1.2
40
35
New Product
2500
2000
1500
1000
0.25
0.20
0.15
0.10
0.05
0.00
500
2.5
2.0
1.5
1.0
0.5
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
= 3.8 A
= 10 V
50
2
T
V
V
0
J
DS
GS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
100
4
Vishay Siliconix
C
50
C
C
oss
iss
rss
150
I
D
6
75
= 3.8 A
Si7434DP
100
200
www.vishay.com
8
125
250
150
10
3