Si7446DP Vishay Intertechnology, Si7446DP Datasheet - Page 3

• Manufacturer Part Number: Si7446DP
• Description: N-channel Reduced Qg, Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71335
S-31728—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
0.016
0.012
0.008
0.004
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 19 A
0.2
On-Resistance vs. Drain Current
10
14
= 15 V
V
T
J
SD
Q
= 150_C
g
I
- Source-to-Drain Voltage (V)
D
0.4
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
20
28
0.6
V
GS
30
42
= 4.5 V
0.8
V
GS
T
= 10 V
40
56
J
= 25_C
1.0
50
70
1.2
6000
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.2
0.8
0.4
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
-25
V
I
C
D
GS
rss
= 19 A
5
V
V
2
= 10 V
GS
DS
C
T
J
0
oss
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
10
Capacitance
25
4
I
Vishay Siliconix
D
= 19 A
15
50
C
iss
6
75
Si7446DP
20
100
www.vishay.com
8
25
125
150
10
30
3