Si7462DP Vishay Intertechnology, Si7462DP Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
Si7462DP
Manufacturer Part Number
Si7462DP
Description
N-channel 200-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7462DP.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7462DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7462DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7462DP
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
- 1.4
- 1.6
0.8
0.6
0.4
0.2
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
- Temperature (_C)
25
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.001
0.01
100
0.1
10
10
100
1
0.1
-2
125
Limited
I
r
Single Pulse
D(on)
DS(on)
T
A
Square Wave Pulse Duration (sec)
V
= 25_C
150
DS
1
Limited
Safe Operating Area
- Drain-to-Source Voltage (V)
10
-1
BV
10
DSS
Limited
1
100
I
80
60
40
20
DM
0
0.01
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1000
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
- T
t
A
Time (sec)
1
1
= P
t
2
DM
Z
thJA
thJA
100
S-03533—Rev. A, 24-Mar-03
t
t
1
2
(t)
10
Document Number: 72136
= 55_C/W
100
600
600