SI7658ADP Vishay Intertechnology, SI7658ADP Datasheet - Page 3

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SI7658ADP

Manufacturer Part Number
SI7658ADP
Description
N-channel 30-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68640
S-81218-Rev. A, 02-Jun-08
0.0030
0.0027
0.0024
0.0021
0.0018
0.0015
80
64
48
32
16
10
0
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0.0
0
0
I
V
D
GS
0.5
14
16
= 10 A
V
= 10 thru 4 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
V
V
- Total Gate Charge (nC)
D
DS
GS
GS
Gate Charge
- Drain Current (A)
1.0
28
32
= 10 V
= 4.5 V
= 10 V
V
DS
= 15 V
1.5
42
48
V
GS
V
DS
= 3 V
2.0
56
64
= 20 V
New Product
2.5
70
80
6000
4800
3600
2400
1200
1.7
1.5
1.3
1.1
0.9
0.7
5
4
3
2
1
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
T
C
= 20 A
T
= 125 °C
C
6
1
V
V
= 25 °C
DS
GS
T
Transfer Characteristics
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
12
2
C
50
C
oss
Vishay Siliconix
iss
Si7658ADP
18
3
V
75
GS
T
C
= 10 V
= - 55 °C
www.vishay.com
100
V
GS
24
4
= 4.5 V
125
150
30
5
3

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