Si7703EDN Vishay Intertechnology, Si7703EDN Datasheet - Page 4

• Manufacturer Part Number: Si7703EDN
• Description: P-channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Intertechnology

Si7703EDN
Vishay Siliconix
www.vishay.com
4
–0.1
–0.2
0.4
0.3
0.2
0.1
0.0
20
10
1
5
4
3
2
1
0
–50
0
0
–25
V
I
Source-Drain Diode Forward Voltage
D
T
DS
2
J
0.3
= 6.3 A
= 150_C
V
= 10 V
SD
0
Q
g
4
– Source-to-Drain Voltage (V)
I
T
Threshold Voltage
– Total Gate Charge (nC)
D
J
0.6
= 800 mA
25
– Temperature (_C)
Gate Charge
6
50
0.9
8
T
75
J
= 25_C
1.2
10
100
_
1.5
125
12
1.8
150
14
New Product
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.5
1.3
1.1
0.9
0.7
50
40
30
20
10
0.001
0
–50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
Single Pulse Power, Junction-to-Ambient
–25
V
I
D
0.01
GS
= 6.3 A
V
= 4.5 V
1
T
GS
J
0
– Junction Temperature (_C)
– Gate-to-Source Voltage (V)
0.1
25
2
Time (sec)
50
1
I
S-03709—Rev. A, 14-May-01
D
3
= 6.3 A
Document Number: 71429
75
10
100
4
125
100
150
600
5