Si7705DN Vishay Intertechnology, Si7705DN Datasheet - Page 4

• Manufacturer Part Number: Si7705DN
• Description: Single P-channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Intertechnology

Si7705DN
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.1
- 0.2
0.01
100
0.4
0.3
0.2
0.1
0.0
0.1
10
1
- 50
0.01
0.1
0
2
1
10
- 25
-4
Source-Drain Diode Forward Voltage
T
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
J
0.2
= 150_C
V
SD
0
- Source-to-Drain Voltage (V)
I
T
Threshold Voltage
D
J
0.4
= 935 mA
25
- Temperature (_C)
10
-3
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
100
T
10
J
= 25_C
-2
1.0
125
Square Wave Pulse Duration (sec)
1.2
150
10
-1
0.20
0.16
0.12
0.08
0.04
0.00
1
50
40
30
20
10
0.001
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
V
1
GS
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
- Gate-to-Source Voltage (V)
P
DM
0.1
JM
- T
2
Time (sec)
t
A
1
= P
t
2
DM
1
Z
I
D
thJA
S-22520—Rev. B, 27-Jan-03
100
thJA
3
= 6.3 A
Document Number: 71607
t
t
1
2
(t)
= 75_C/W
10
MOSFET
4
100
600
600
5