Si7806DN Vishay Intertechnology, Si7806DN Datasheet - Page 3

• Manufacturer Part Number: Si7806DN
• Description: N-channel 30-V (D-S) Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71869
S-20805—Rev. A, 17-Jun-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
5
D
DS
=
0.2
On-Resistance vs. Drain Current
= 15 V
4
V
A
10
SD
Q
T
V
J
g
GS
= 150_C
I
– Source-to-Drain Voltage (V)
D
– Total Gate Charge (nC)
0.4
= 4.5 V
15
– Drain Current (A)
Gate Charge
8
20
0.6
12
25
0.8
V
GS
30
= 10 V
T
16
J
= 25_C
1.0
35
40
20
1.2
New Product
0.025
0.020
0.015
0.010
0.005
0.000
1400
1200
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
–25
C
V
I
D
rss
GS
= 14.4 A
5
I
V
V
D
2
= 10 V
GS
DS
T
= 5 A
J
0
– Gate-to-Source Voltage (V)
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
10
25
Capacitance
4
I
D
Vishay Siliconix
C
= 14.4 A
15
50
oss
C
iss
6
75
Si7806DN
20
100
www.vishay.com
8
25
125
150
10
30
3