Si7810DN Vishay Intertechnology, Si7810DN Datasheet - Page 3

• Manufacturer Part Number: Si7810DN
• Description: N-channel 100-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 70689
S-04559—Rev. A, 27-Aug-01
0.20
0.16
0.12
0.08
0.04
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
2
= 5.4 A
0.2
On-Resistance vs. Drain Current
= 50 V
4
V
SD
V
Q
GS
g
4
I
– Source-to-Drain Voltage (V)
D
– Total Gate Charge (nC)
0.4
= 6 V
– Drain Current (A)
Gate Charge
8
T
6
J
= 150_C
0.6
8
12
0.8
10
V
T
GS
16
J
= 25_C
1.0
= 10 V
12
_
20
14
1.2
New Product
1000
0.16
0.12
0.08
0.04
0.00
800
600
400
200
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
–25
V
I
C
D
GS
oss
= 5.4 A
V
V
2
= 10 V
GS
DS
T
20
J
0
– Gate-to-Source Voltage (V)
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
C
rss
40
50
C
iss
6
75
I
Si7810DN
D
= 5.4 A
100
60
www.vishay.com
8
125
150
10
80
3