Si7846DP Vishay Intertechnology, Si7846DP Datasheet - Page 3

• Manufacturer Part Number: Si7846DP
• Description: N-channel 150-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71442
S-31728—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
50
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5 A
0.2
On-Resistance vs. Drain Current
= 75 V
10
V
SD
15
Q
g
V
T
- Source-to-Drain Voltage (V)
I
J
GS
0.4
D
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
= 10 V
Gate Charge
20
0.6
30
30
0.8
T
45
J
= 25_C
40
1.0
1.2
50
60
3000
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 5 A
C
= 10 V
rss
30
2
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
60
4
Vishay Siliconix
C
50
C
oss
iss
I
90
6
D
75
= 5 A
Si7846DP
100
120
www.vishay.com
8
125
150
150
10
3