Si7852DP Vishay Intertechnology, Si7852DP Datasheet - Page 3

• Manufacturer Part Number: Si7852DP
• Description: N-channel 80-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71627
S-31727—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.04
0.03
0.02
0.01
0.00
0.01
100
0.1
20
16
12
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 10 A
0.2
On-Resistance vs. Drain Current
= 40 V
10
V
SD
15
T
Q
J
g
= 150_C
- Source-to-Drain Voltage (V)
V
I
0.4
D
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
20
= 6 V
0.6
30
30
0.8
T
J
= 25_C
45
V
40
GS
1.0
= 10 V
1.2
50
60
3000
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
500
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 10 A
= 10 V
2
C
T
V
V
20
0
rss
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
C
50
40
C
oss
iss
I
6
D
75
= 10 A
Si7852DP
100
60
www.vishay.com
8
125
150
10
80
3