Si7892DP Vishay Intertechnology, Si7892DP Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
Si7892DP
Manufacturer Part Number
Si7892DP
Description
N-channel 30-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7892DP.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7892DP-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7892DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7892DP
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0.6
0.4
0.2
-50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-25
- 4
- 4
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.05
0
Threshold Voltage
T
J
0.02
Single Pulse
- Temperature (_C)
25
I
10
D
= 250 mA
- 3
50
10
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
- 3
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
- 2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
- 2
10
- 1
10
1
- 1
200
160
120
80
40
0
0.001
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
- T
t
1
Time (sec)
1
A
= P
t
2
DM
0.1
Z
thJA
thJA
100
S-31727—Rev. B, 18-Aug-03
t
t
1
2
(t)
Document Number: 71773
= 50_C/W
1
600
10
10