Si7911DN Vishay Intertechnology, Si7911DN Datasheet
Si7911DN
Manufacturer Part Number
Si7911DN
Description
Dual P-channel 20-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7911DN.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
Si7911DN-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 435
Company:
Part Number:
Si7911DN-T1-E3
Manufacturer:
VISHAY
Quantity:
464
Part Number:
Si7911DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 20
(V)
J
8
D1
3.30 mm
ti
7
D1
t A bi
6
PowerPAK 1212-8
D2
Bottom View
0.067 @ V
0.094 @ V
0.051 @ V
5
J
J
a
a
= 150_C)
= 150_C)
t
D2
a
a
r
Parameter
Parameter
DS(on)
Dual P-Channel 20-V (D-S) MOSFET
1
GS
GS
GS
a
a
S1
= - 2.5 V
= - 1.8 V
= - 4.5 V
(W)
2
G1
a
3
Ordering Information: Si7911DN-T1
S2
3.30 mm
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
- 5.7
- 5.0
- 4.2
= 25_C
= 85_C
= 25_C
= 85_C
(A)
Symbol
Symbol
T
R
R
R
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New Low Thermal Resistance PowerPAKr
APPLICATIONS
D Portable
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
G
Package
stg
- PA Switch
- Battery Switch
- Load Switch
1
P-Channel MOSFET
10 secs
S
D
Typical
1
1
- 5.7
- 4.1
- 2.1
2.5
1.3
5.6
40
75
- 55 to 150
- 20
"8
- 20
Steady State
Maximum
G
Vishay Siliconix
2
0.85
- 4.2
- 3.0
- 1.1
P-Channel MOSFET
1.3
50
94
7
Si7911DN
S
D
2
2
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1
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