MCH3409 Sanyo Semiconductor Corporation, MCH3409 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/5/586/sanyo_semiconductor_corporation_sml.jpg)
MCH3409
Manufacturer Part Number
MCH3409
Description
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.MCH3409.pdf
(4 pages)
Continued from preceding page.
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
300
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50
0
0
0
0
I D =0.5A
Parameter
0.1
1
PW=10 s
D.C. 1%
4V
0V
P.G
0.2
Drain-to-Source Voltage, V DS -- V
1.0A
2
Gate-to-Source Voltage, V GS -- V
V IN
0.3
3
R DS (on) -- V GS
V IN
I D -- V DS
0.4
4
50
G
0.5
5
0.6
6
V DD =10V
Symbol
t d (on)
t d (off)
Coss
D
Ciss
Crss
V SD
Qgs
Qgd
Qg
t r
t f
0.7
7
S
R L =10
I D =1A
0.8
8
MCH3409
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =10V, V GS =4V, I D =2.0A
V DS =10V, V GS =4V, I D =2.0A
V DS =10V, V GS =4V, I D =2.0A
I S =2.0A, V GS =0
Ta=25 C
0.9
V OUT
IT02720
IT02722
9
MCH3409
1.0
10
Conditions
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
0
0
--60
0
V DS =10V
--40
--20
0.4
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
0
min
R DS (on) -- Ta
20
I D -- V GS
0.8
40
Ratings
typ
0.87
190
60
2.7
0.6
0.6
40
25
25
25
18
9
1.2
80
max
100
1.2
1.6
120
No.6911-2/4
Unit
nC
nC
nC
140
pF
pF
pF
ns
ns
ns
ns
IT02721
IT02723
V
160
2.0