MCH5802 Sanyo Semiconductor Corporation, MCH5802 Datasheet - Page 2

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MCH5802

Manufacturer Part Number
MCH5802
Description
DC/DC Converters
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Electrical Characteristics at Ta=25 C
Electrical Connection
Switching Time Test Circuit
[MOSFET]
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
--10V
P.G
D
G
0V
PW=10 s
D.C. 1%
V IN
Parameter
S
V IN
C
A
50
G
(Top view)
V DD = --15V
D
G : Gate
S : Source
A : Anode
C : Cathode
D : Drain
S
I D = --500mA
R L =30
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
MCH5802
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
V F 1
V F 2
yfs
Qg
V R
I R
t rr
C
t r
t f
V OUT
I D =--1mA, V GS =0
V DS =--30V, V GS =0
V GS = 16V, V DS =0
V DS =--10V, I D =--1mA
V DS =--10V, I D =--500mA
I D =--500mA, V GS =- -10V
I D =--300mA, V GS =- -4V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =--10V, V GS =--10V, I D =- -1A
V DS =--10V, V GS =--10V, I D =- -1A
V DS =--10V, V GS =--10V, I D =- -1A
I S =--1A, V GS =0
I R =0.5mA
I F =0.3A
I F =0.5A
V R =10V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
MCH5802
t rr Test Circuit
[SBD]
Conditions
Duty 10%
10 s
50
--5V
100
min
--1.2
570
--30
30
10
Ratings
typ
0.35
0.42
--0.9
820
430
780
2.6
0.5
0.6
80
15
13
20
15
20
7
7
max
1090
0.40
0.47
--2.6
--1.5
560
200
10
10
--1
t rr
No.6961-2/5
Unit
mS
m
m
pF
pF
pF
nC
nC
nC
pF
ns
ns
ns
ns
ns
V
V
V
V
V
V
A
A
A

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