MCH5812 Sanyo Semiconductor Corporation, MCH5812 Datasheet - Page 3

• Manufacturer Part Number: MCH5812
• Description: Mosfet : N-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications
• Manufacturer: Sanyo Semiconductor Corporation

Switching Time Test Circuit
[MOSFET]
P.G
4V
0V
400
350
300
250
200
150
100
PW=10 s
D.C. 1%
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
0
0
V IN
I D =0.1A
0.1
V IN
0.2
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
50
G
0.3
1.0A
R DS (on) -- V GS
0.5A
V DD =10V
I D -- V DS
0.4
4
D
S
0.5
I D =1A
R L =10
MCH5812
0.6
6
V OUT
0.7
0.8
8
[MOSFET]
[MOSFET]
Ta=25 C
0.9
IT06289
IT06352
MCH5812
1.0
10
t rr Test Circuit
[SBD]
Duty 10%
10 s
50
400
350
300
250
200
150
100
1.0
0.8
0.6
0.4
0.2
50
0
0
--60
0
--40
0.2
--5V
--20
100
0.4
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
0
0.6
R DS (on) -- Ta
20
I D -- V GS
0.8
10
40
1.0
60
1.2
80
1.4
100
t rr
1.6
No.7998-3/6
120
[MOSFET]
[MOSFET]
V DS =10V
1.8
140
IT06290
IT06353
160
2.0