MCH5811 Sanyo Semiconductor Corporation, MCH5811 Datasheet - Page 4

• Manufacturer Part Number: MCH5811
• Description: Mosfet : N-channel Silicon Mosfet SBD : Schottky Barrier Diode General-purpose Switching Device Applications
• Manufacturer: Sanyo Semiconductor Corporation

0.01
100
1.0
1.0
0.1
1.0
0.8
0.6
0.4
0.2
10
10
10
0.001
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0.1
0
0
V DD =10V
V GS =4V
V DS =10V
I D =1.5A
2 3
20
2
5 7
1
Ambient Temperature, Ta -- C
40
0.01
Total Gate Charge, Qg -- nC
3
Drain Current, I D -- A
Drain Current, I D -- A
t f
SW Time -- I D
2 3
60
V GS -- Qg
2
P D -- Ta
y
t d (on)
5
fs -- I D
5 7
80
7
0.1
1.0
3
100
2 3
5 7
120
2
1.0
4
V DS =10V
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
140
3
2 3
IT02905
IT02907
IT07692
IT07669
160
MCH5811
5
5
5
1000
0.01
0.01
100
1.0
0.1
1.0
0.1
10
10
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
0.3
2
Ciss, Coss, Crss -- V DS
0.4
5 7
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
Diode Forward Voltage, V SD -- V
Operation in this
area is limited by R DS (on).
0.1
0.5
6
2 3
I F -- V SD
0.6
8
A S O
5 7 1.0
0.7
10
Ciss
0.8
12
2
2 3
0.8mm) 1unit
0.9
14
5 7 10
1.0
16
[MOSFET]
[MOSFET]
[MOSFET]
<10 s
No.8059-4/6
f=1MHz
V GS =0
1.1
18
2 3
IT07681
IT02906
IT02908
1.2
20
5