MCH5836 Sanyo Semiconductor Corporation, MCH5836 Datasheet

MCH5836

Manufacturer Part Number

MCH5836

Description

Mosfet : P-channel Silicon Mosfet Osfet General-purpose Switching Device Applications

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH5836.pdf (6 pages)

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Ordering number : ENA0780

MCH5836

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Marking : YA

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

•

Composite type with an P-channel silicon MOSFET (MCH3307) and a schottky barrier diode (SS10015M)

contained in one package facilitating high-density mounting.

[MOSFET]

•

[SBD]

•

Low ON-resistance.

1.8V drive.

Short reverse recovery time.

Low forward voltage.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Symbol

V GSS

V DSS

MOSFET : P-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

General-Purpose Switching Device

Applications

Tstg

I DP

Tch

P D

I D

SANYO Semiconductors

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm

MCH5836

Conditions

✕0.8mm) 1unit

DATA SHEET

41807PE TI IM TC-00000614

Ratings

--55 to +125

Continued on next page.

±10

150

0.8

--1

No. A0780-1/6

Unit

°C

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