MCH6308 Sanyo Semiconductor Corporation, MCH6308 Datasheet

MCH6308

Manufacturer Part Number

MCH6308

Description

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH6308.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MCH6308-TL-E

Manufacturer:

SANYO/三洋

Quantity:

20 000

Current page: 1 of 4
Download datasheet (30Kb)

Ordering number : ENN7620

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : JH

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

1.8V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

I D =- -1mA, V GS =0

V DS =--12V, V GS =0

V GS = 6.4V, V DS =0

V DS =--6V, I D =--1mA

V DS =--6V, I D =- -1.7A

I D =- -1.7A, V GS =--4.5V

I D =- -0.8A, V GS =--2.5V

I D =- -0.4A, V GS =--1.8V

PW 10 s, duty cycle 1%

Mounted on a ceramic board (1200mm

MCH6308

Conditions

Package Dimensions

unit : mm

2193A

Conditions

(Bottom view)

0.65

2.0

0.8mm)

0.3

[MCH6308]

min

P-Channel Silicon MOSFET

--0.3

--12

3.3

71003 TS IM TA-100053

(Top view)

0.15

Ratings

typ

Ratings

150

110

4.7

MCH6308

Continued on next page.

--55 to +150

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

SANYO : MCPH6

max

--3.5

--1.0

150

155

225

--12

--14

--10

1.5

No.7620-1/4

Unit

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