SPB18P06PG Infineon Technologies Corporation, SPB18P06PG Datasheet - Page 6

• Manufacturer Part Number: SPB18P06PG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Rev 1.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
300
250
200
150
100
10
10
10
50
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=-13.2 A; V
5
20
10
98 %
-V
T
GS
j
DS
60
=-10 V
[°C]
Crss
[V]
typ.
Ciss
Coss
15
100
20
140
180
page 6
25
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
4.5
3.5
2.5
1.5
0.5
10
10
=f(T
SD
5
4
3
2
1
0
-1
-2
1
0
-60
)
0
175 °C, 98%
j
); V
j
GS
-20
0.5
=V
25 °C, typ
25 °C, 98%
DS
20
; I
1
D
=-1000 µA
-V
min.
T
j
SD
1.5
60
[°C]
typ.
[V]
max.
100
2
SPB18P06P G
175 °C, typ
140
2.5
2008-02-18
180
3