SUP70N06-14 Vishay Intertechnology, SUP70N06-14 Datasheet - Page 2

• Manufacturer Part Number: SUP70N06-14
• Description: N-channel Enhancement-mode Trans
• Manufacturer: Vishay Intertechnology

Notes:
a.
b.
c.
www.vishay.com FaxBack 408-970-5600
2-2
SUP/SUB70N06-14
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
G
c
c
V l
b
O S
Parameter
a
c
D i C
c
c
c
c
a
R
i
a
300 s, duty cycle
a
a
Symbol
V
I
2%.
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
DSS
I
g
Q
Q
SM
t
I
oss
t
t
SD
iss
rss
rr
fs
gs
gd
s
r
f
rr
g
C
I
= 25 C)
D
V
V
V
V
V
V
V
V
DS
DS
GS
GS
DS
GS
I
I
= 60 V, V
= 60 V, V
= 10 V, I
= 10 V, I
= 30 V
60 A, V
V
F
V
= 0 V, V
V
V
V
V
V
DS
V
DD
DD
30 V V
= 60 A, di/dt = 100 A/ s
I
Test Condition
DS
DS
GS
0 V V
DS
GS
F
DS
60 A di/d
b
= 0 V, V
= 70 A, V
= 30 V, R
= V
= 5 V, V
= 0 V, I
= 60 V, V
= 10 V, I
= 15 V, I
,
GEN
V
DS
D
D
GS
GS
GS
GS
= 30 A, T
= 30 A, T
,
, I
= 25 V, f = 1 MHz
= 10 V, R
= 0 V, T
= 0 V, T
= 10 V, I
GS
D
GS
DS
25 V f
10 V I
GS
L
L
= 250 A
D
GS
D
=
= 0.47
= 30 A
100 A/
= 1 mA
= 10 V
= 30 A
= 0 V
= 0 V
J
J
J
J
20 V
G
D
= 125 C
= 175 C
= 125 C
= 175 C
1 MH
= 60 A
= 2.5
60 A
Min
2.0
60
70
25
Typ
2400
0.08
S-57253—Rev. C, 24-Feb-98
490
130
3.0
3.5
50
45
12
16
13
11
30
11
47
Document Number: 70291
Max
0.014
0.023
0.028
150
160
4.0
1.4
50
70
30
30
60
25
70
100
1
Unit
nC
nA
pF
ns
ns
ns
V
V
A
S
A
A
V
A
C
A
A
F
C