SUP85N15-21 Vishay Intertechnology, SUP85N15-21 Datasheet - Page 2

• Manufacturer Part Number: SUP85N15-21
• Description: N-channel 150-V (D-S) 175C MOSFET
• Manufacturer: Vishay Intertechnology

SUP85N15-21
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
b
Parameter
a
c
c
c
c
c
a
a
a
J
=25_C UNLESS OTHERWISE NOTED)
Symbol
V
I
RM(REC)
V
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
C
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
I
Q
Q
g
SM
I
t
oss
t
rss
t
SD
iss
S
rr
fs
gs
gd
r
f
rr
g
New Product
C
V
V
I
D
V
V
V
V
DS
DS
= 25_C)
GS
GS
GS
DS
DS
^ 85 A, V
= 120 V, V
= 120 V, V
I
= 75 V, V
= 10 V, I
= 10 V, I
V
= 0 V, V
F
F
V
V
V
V
V
V
DS
V
V
DS
DS
= 50 A, di/dt = 100 A/ms
DS
Test Condition
DD
DD
I
DS
GS
DS
F
= 85 A, V
= 0 V, V
= V
= 120 V, V
w 5 V, V
= 75 V, R
= 75 V, R
= 0 V, I
b
= 10 V, I
= 15 V, I
GEN
DS
D
D
GS
GS
GS
GS
GS
= 30 A, T
= 30 A, T
= 25 V, f = 1 MHz
, I
= 10 V, R
GS
= 0 V, T
= 0 V, T
D
= 10 V, I
D
GS
GS
D
= 250 mA
D
L
L
= 250 mA
GS
= "20 V
= 30 A
= 0.9 W
= 0.9 W
= 30 A
= 10 V
= 0 V
= 0 V
J
J
J
J
G
= 125_C
= 175_C
D
D
= 125_C
= 175_C
= 85 A
= 2.5 W
m
Min
150
120
25
2
0.0175
Typ
4750
0.52
530
220
170
170
130
1.0
76
21
26
22
40
8
S-21715—Rev. A, 07-Oct-02
Document Number: 72003
"100
Max
0.021
0.042
0.055
250
110
250
250
180
200
1.5
1.2
50
35
60
85
12
4
1
Unit
nA
mA
m
pF
nC
mC
ns
ns
W
V
A
S
A
V
A