RF1S30N06LESM Intersil Corporation, RF1S30N06LESM Datasheet

RF1S30N06LESM

Manufacturer Part Number

RF1S30N06LESM

Description

30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs

Manufacturer

Intersil Corporation

Datasheet

1.RF1S30N06LESM.pdf (8 pages)

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30A, 60V, ESD Rated, 0.047 Ohm, Logic

Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. These transistors can be operated

directly from integrated circuits.

These transistors incorporate ESD protection and are

designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49027.

Ordering Information

NOTE: When ordering use the entire part number. Add sufﬁx, 9A, to

obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.

Packaging

RFP30N06LE

RF1S30N06LESM

PART NUMBER

DRAIN (FLANGE)

TO-220AB

TO-263AB

PACKAGE

JEDEC TO-220AB

6-260

Data Sheet

F30N06LE

1S30N06L

SOURCE

BRAND

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

DRAIN

GATE

http://www.intersil.com or 407-727-9207

RFP30N06LE, RF1S30N06LESM

Features

• 30A, 60V

• r

• 2kV ESD Protected

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

Symbol

- TB334 “Guidelines for Soldering Surface Mount

DS(ON)

Components to PC Boards”

SOURCE

= 0.047

GATE

April 1999

JEDEC TO-263AB

PSPICE™ is a trademark of MicroSim Corporation.

File Number 3629.2

(FLANGE)

DRAIN

Intersil Corporation 1999

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