AN203 Vishay Intertechnology, AN203 Datasheet

AN203

Manufacturer Part Number

AN203

Description

Silicon-gate Switching Functions Optimize Data Acquisition Front End

Manufacturer

Vishay Intertechnology

Datasheet

1.AN203.pdf (6 pages)

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The trend in data acquisition is moving toward ever-increasing

accuracy. Twelve-bit resolution is now the norm, and sixteen

bits are not uncommon. Along with this precision, throughput

is also very important. When monitoring several hundred

channels, sample rates in the hundreds of kilohertz are not

only desirable but, in many cases, mandatory.

Analog switches and analog multiplexers find extensive use at

the heart of most data acquisition and process control

systems. This application note provides useful information

about the new high-performance DG400 family of devices. It

also reviews many design considerations that will enable you

to get the best performance in your data acquisition designs.

Silicon-Gate Technology

Vishay Siliconix’s advanced high-voltage silicon-gate CMOS

processing brings many benefits to the DG400 family of analog

switches and multiplexers: fast switching speed, low power

consumption, low charge injection, low leakage, and TTL

compatibility. In addition, this family works with reduced or

single power supplies.

The metal-gate process (Figure 1) requires that the gate

overlap with the drain and source areas to assure reliable

operation even when misalignments occur during masking

Document Number: 70601

06-Aug-99

Í Í Í Í Í Í

a) Metal-Gate MOSFET

Optimize Data Acquisition Front Ends

Oxide

Silicon-Gate Switching Functions

FIGURE 1. Comparison of Metal and Silicon-Gate Structures

operations. This produces high gate-drain and gate-source

capacitances. The silicon-gate process, on the other hand, is

self-aligning in that it uses the silicon gate itself as a mask for

source and drain diffusions. This produces minimal overlap,

resulting in much smaller parasitic capacitances. Because the

silicon-gate process is more tightly controlled than the older

metal-gate technologies, individual devices can be spaced

closer together, resulting in smaller die that achieve equivalent

performance.

ESD Tolerance

Electrostatic discharge (ESD) has caused many CMOS

device failures, both during manufacture and during handling

or PC board assembly. Historically, CMOS devices have

shown an electrostatic discharge sensitivity (ESDS) in the

However, the DG400 family incorporates specially designed

ESD protection. These devices have been evaluated using the

electrostatic discharge sensitivity (ESDS) test circuit of

MIL-STD-883, Method 3015 (100-pF capacitor discharged

through a 1.5-k

overall tolerance of 1000 V. However, ESD tests on the

source/drain—with the power supply pins bypassed or

shortened—show that the DG400 through DG405 have

tolerances of more than

through DG419 withstand >

500-V range, which was insufficient in many cases.

b) Silicon-Gate “Self-Aligned’ MOSFET

Í Í Í Í Í

resistor). The DG4XX series has a typical

Poly-Si

Oxide

www.vishay.com FaxBack 408-970-5600

2000 V, whereas the DG408

4000 V.

Vishay Siliconix

AN203

6-1

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