CEM6080 Chino-Excel Technology Corp., CEM6080 Datasheet

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CEM6080

Manufacturer Part Number
CEM6080
Description
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Manufacturer
Chino-Excel Technology Corp.
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Super high dense cell design for extremely low R
Lead free product is acquired.
60V, 5.6A, R
-60V, -3.3A, R
High power and current handing capability.
Surface mount Package.
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Parameter
Parameter
= 45m
= 75m
= 130m
= 180m
a
@V
@V
@V
@V
GS
GS
GS
GS
= 10V.
= 4.5V.
= -10V.
= -4.5V.
b
SO-8
DS(ON)
T
A
= 25 C unless otherwise noted
.
1
1
Symbol
Symbol
T
R
V
V
J
I
P
DM
,T
I
DS
GS
D
D
JA
stg
N-Channel
5.6
60
23
20
D
8
1
S
1
-55 to 150
1
Limit
62.5
2.0
D
CEM6080
G
7
2
1
1
P-Channel
D
S
6
3
2
2
-3.3
-60
-13
http://www.cetsemi.com
20
D
G
5
4
2
2
Rev 1.
Units
Units
2006.Sep
C/W
W
V
V
A
A
C
5

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CEM6080 Summary of contents

Page 1

... Details are subject to change without notice . = 10V. = 4.5V. = -10V -4.5V DS(ON) SO unless otherwise noted A Symbol stg Symbol CEM6080 N-Channel P-Channel Units 60 - ...

Page 2

... V = 10V GEN t d(off 30V 5.6A 10V 0V 1. CEM6080 Min Typ Max Units µ 100 -100 655 pF 100 ...

Page 3

... V = -10V GEN t d(off -30V -3.3A -10V 0V -1. CEM6080 Min Typ Max Units - µ 100 -100 105 130 m 135 180 885 ...

Page 4

... T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature 10 2.0 2.5 2.2 1.9 1.6 1.3 1.0 0.7 0 100 125 150 4 CEM6080 =125 C - 0.0 1.0 2.0 3.0 4 Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics I =5. =10V GS -100 - 100 150 T , Junction Temperature Figure 4 ...

Page 5

... Figure 9. Capacitance 1 =-250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - Junction Temperature Figure 11. Gate Threshold Variation with Temperature 3.0 4.0 5 100 125 150 5 CEM6080 =125 0.0 1.0 2.0 3.0 4 Gate-to-Source Voltage (V) GS Figure 8. Transfer Characteristics 2.2 I =-3. =-10V GS 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 ...

Page 6

... I =-3. Qg, Total Gate Charge (nC) Figure 15. Gate Charge CEM6080 2 R Limit DS(ON) 1 10ms 100ms = =150 C J Single Pulse - Drain-Source Voltage (V) DS Figure 14 ...

Page 7

... Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve d(on) 90% V OUT V OUT 10% 50 10% PULSE WIDTH Figure 18. Switching Waveforms - CEM6080 t off t d(off 90% INVERTED 10% 90% 50 (t)=r ( θJA θ =See Datasheet θJA 3 ...

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