CEM6080 Chino-Excel Technology Corp., CEM6080 Datasheet - Page 3

• Manufacturer Part Number: CEM6080
• Description: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: Chino-Excel Technology Corp.

P-Channel Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Parameter
c
c
b
Symbol
R
V
BV
t
t
V
Q
I
I
I
GS(th)
DS(on)
C
C
C
d(on)
d(off)
Q
Q
DSS
GSSF
GSSR
g
I
t
t
SD
S
iss
oss
rss
r
gd
f
gs
FS
DSS
g
3
T
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 25 C unless otherwise noted
Test Condition
= 0V, I
= -60V, V
= 20V, V
= -20V, V
= V
= -10V, I
= -4.5V, I
= -15V, I
= -30V, V
= -30V, I
= -10V, R
= -30V, I
= -10V
= 0V, I
DS
, I
D
S
D
= -250 µ A
= -1.3A
D
D
D
D
DS
D
GS
DS
GS
GEN
= -250 µ A
= -3.3A
= -3.3A,
= -3.3A
= -1A,
= -2.6A
= 0V
= 0V
= 0V
= 0V,
= 6
Min
-60
-1
CEM6080
10.5
Typ
105
135
885
80
80
12
31
8
4
5
2
1
-100
Max
100
130
180
-3.3
-1.2
24
62
10
14
-1
-3
8
Units
m
m
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
6