BGA2011 Philips Semiconductors (Acquired by NXP), BGA2011 Datasheet - Page 3

• Manufacturer Part Number: BGA2011
• Description: BGA2011; 900 MHZ High Linear Low Noise Amplifier;; Package: SOT363 (UMT6)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; V
2000 Dec 04
R
I
I
R
R
|s
NF
IP3
S
C
SYMBOL
th j-s
L IN
L OUT
900 MHz high linear low noise amplifier
21
SYMBOL
in
|
2
supply current
control current
return losses input
return losses output
insertion power gain
noise figure
input intercept point
thermal resistance from junction
to solder point
PARAMETER
S
= 3 V; I
PARAMETER
S
= 15 mA; f = 900 MHz; T
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 1.5 mm)
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 1.5 mm)
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 1.5 mm)
typical application; see Fig.2;
I
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 1.5 mm)
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 1.5 mm)
S
= 15 mA
P
tot
CONDITIONS
= 135 mW; T
3
j
CONDITIONS
= 25 C; unless otherwise specified.
s
100 C
10
MIN.
VALUE
350
15
0.11
15
19
16
1.5
1.6
1.7
4
10
11
11
17
11
12
14
2
TYP.
Product specification
20
BGA2011
MAX.
UNIT
K/W
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
UNIT