MT28C6428P20 Micron Semiconductor Products, Inc., MT28C6428P20 Datasheet - Page 3
MT28C6428P20
Manufacturer Part Number
MT28C6428P20
Description
4 Meg X 16 Asynchronous/page Flash 512K X 16 SRAM Combo Memory
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT28C6428P20.pdf
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PART NUMBERING INFORMATION
eral different combinations of features (see Figure 1).
4 Meg x 16 Asynchronous/Page Flash 512K x 16 SRAM Combo Memory
MT28C6428P20_3.p65 – Rev. 3, Pub. 7/02
Micron Technology
Flash Family
28C = Dual-Supply Flash/SRAM Combo
Density/Organization/Banks
642 = 64Mb (4,096K x 16)
SRAM Density
8 = 8Mb SRAM (512K x 16)
Read Mode Operation
P = Asynchronous/Page Read
bank a = 1/4; bank b = 3/4
Micron’s low-power devices are available with sev-
NOTE: 1. For part number combinations not listed in this table, please contact
PART NUMBER
MT28C6428P20FM-80 BET
MT28C6428P20FM-80 TET
MT28C6428P18FM-85 BET
MT28C6428P18FM-85 TET
your Micron representative.
MT 28C 642 8 P 20 FM-80 T ET
Valid Part Number Combinations
Part Number Chart
4 MEG x 16 ASYNCHRONOUS/PAGE FLASH
TIME (ns)
Figure 1
ACCESS
Table 2
80
80
85
85
512K x 16 SRAM COMBO MEMORY
3
Valid combinations of features and their correspond-
ing part numbers are listed in Table 2.
BOOT BLOCK
STARTING
ADDRESS
Bottom
Bottom
Top
Top
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TEMPERATURE
Boot Block Starting Address
B = Bottom boot
T = Top boot
Access Time
-80 = 80ns
-85 = 85ns
1
Operating Temperature Range
None = Commercial (0ºC to +70ºC)
Package Code
FM = 67-ball FBGA (8 x 8 grid)
Operating Voltage Range
20 = 1.80V–2.20V V
18 = 1.70V–1.90V
-40
-40
-40
-40
OPERATING
ET = Extended (-40ºC to +85ºC)
o
o
o
o
RANGE
C to +85
C to +85
C to +85
C to +85
o
o
o
o
C
C
C
C
CC
©2002, Micron Technology, Inc.
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