MT28F002B3 Micron Semiconductor Products, Inc., MT28F002B3 Datasheet - Page 26

• Manufacturer Part Number: MT28F002B3
• Description: 2Mb Smart 3 Boot Block Flash Memory
• Manufacturer: Micron Semiconductor Products, Inc.

SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS: CE#-CONTROLLED WRITES
Commercial Temperature (0 C
WORD/BYTE WRITE AND ERASE DURATION CHARACTERISTICS
NOTE: 1. Measured with V
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
AC CHARACTERISTICS
PARAMETER
Address hold time from CE# HIGH
Data hold time from CE# HIGH
WE# setup time to CE# LOW
WE# hold time from CE# HIGH
V
V
RP# HIGH to CE# LOW delay
RP# at V
WRITE duration (WORD or BYTE WRITE)
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
CE# HIGH to busy status (SR7 = 0)
V
RP# at V
Boot block relock delay time
PARAMETER
Boot/parameter BLOCK ERASE time
Main BLOCK ERASE time
Main BLOCK WRITE time (byte mode)
Main BLOCK WRITE time (word mode)
PP
PP
PP
setup time to CE# HIGH
setup time to CE# LOW delay
hold time from status data valid
2. Measured with V
3. RP# should be held at V
4. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
5. Polling status register before
6.
7. Typical values measured at T
8. Assumes no system overhead.
9. Typical WRITE times use checkerboard data pattern.
HH
HH
t
REL is required to relock boot block after WRITE or ERASE to boot block.
or WP# HIGH setup time to CE# HIGH
or WP# HIGH hold time from status data valid
PP
PP
= V
= V
PPH 1
PPH 2
HH
T
or WP# held HIGH until boot block WRITE or ERASE is complete.
= 3.3V.
A
= 5V.
A
t
WB is met may falsely indicate WRITE or ERASE completion.
= +25 C.
+70 C) and Extended Temperature (-40 C
SMART 3 BOOT BLOCK FLASH MEMORY
SYMBOL
t
t
t
t
t
t
WED1
WED2
WED3
WED4
t
t
t
t
VPS1
VPS2
t
t
t
t
t
VPH
RHH
RHS
26
WH
t
REL
WB
AH
DH
WS
RS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1,000
MIN
200
100
200
300
300
600
200
10
0
0
0
6
0
0
-9/-10 ET
TYP MAX TYP MAX UNITS NOTES
0.5
2.8
1.5
1.5
3.3V V
14
MAX
PP
7
–
–
200
T
A
+85 C); V
0.5
1.5
1
1
5V V
PP
UNITS
14
7
–
–
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
s
= +3.3V 0.3V
©2000, Micron Technology, Inc.
s
s
s
s
NOTES
2Mb
3, 4
7, 8, 9
7, 8, 9
1
2
3
4
4
4
5
4
3
6
7
7