MT54V512H18A Micron Semiconductor Products, Inc., MT54V512H18A Datasheet - Page 14

• Manufacturer Part Number: MT54V512H18A
• Description: 9Mb QDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
512K x 18 2.5V V
MT54V512H18A_16_A.fm - Rev 10/02
1. Q00 refers to output from address A0 + 0. Q01 refers to output from the next internal burst address following A0,
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A0 = A1, data Q00 = D10, Q01 = D11. Write data is forwarded immediately as read results.
W#
K#
R#
C#
i.e., A0 + 1.
Q
K
A
D
C
A0
D10
READ
t KHCH
1
DD
t KHKL
, HSTL, QDRb2 SRAM (Footer Desc variable)
t AVKH t KHAX
t KHKL
D11
A1
WRITE
t KHCH
2
t IVKH
t KLKH
t AVKH t KHAX
t KLKH
D30
A2
READ
3
t DVKH
t CHQX1
t KHIX
t CHQV
t KHK#H
t KHKH
D31
A3
WRITE
4
(Note 1)
READ/WRITE Timing
Q00
t KHDX
t CHQV
0.16µm Process
Figure 6:
D50
A4
READ
5
t KHKH
14
Q01
t KHK#H
t CHQX
D51
A5
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
6
t DVKH
Q20
t CHQX
D60
DD
NOP
7
, HSTL, QDRb2 SRAM
Q21
t KHDX
D61
A6
DON’T CARE
WRITE
8
Q40
512K x 18
©2002, Micron Technology Inc.
NOP
ADVANCE
9
Q41
UNDEFINED
t CHQZ
10