MT58L1MY18P Micron Semiconductor Products, Inc., MT58L1MY18P Datasheet - Page 21

• Manufacturer Part Number: MT58L1MY18P
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Scd,
• Manufacturer: Micron Semiconductor Products, Inc.

SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time ZZ is in a HIGH state.
After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
causes the device to enter SNOOZE MODE. When ZZ
Table 18: SNOOZE MODE Electrical Characteristics
NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, SCD SyncBurst SRAM
MT58L1MY18P1_16_D.fm – Rev. D, Pub 2/03
1. This parameter is sampled.
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
Outputs (Q)
SNOOZE MODE is a low-current, power-down
ZZ is an asynchronous, active HIGH input that
ALL INPUTS
(except ZZ)
I
SUPPLY
CLK
ZZ
SB
2Z. The duration of SNOOZE MODE is
t
ZZI
t
I
ZZ
ISB2Z
SNOOZE MODE Waveform
CONDITIONS
ZZ ³ V
Figure 10:
IH
21
PIPELINED, SCD SYNCBURST SRAM
High-Z
becomes a logic HIGH, I
setup time
pending when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed.
18Mb: 1 MEG x 18, 512K x 32/36
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
I
t
t
RZZI
SB2Z
t
RZZ
ZZI
ZZ
t
ZZ is met. Any READ or WRITE operation
2(
MIN
t
0
KC)
DESELECT or READ Only
t
RZZI
SB
2(
2(
MAX
30
t
t
2Z is guaranteed after the
KC)
KC)
t
RZZ
UNITS
mA
ns
ns
ns
ns
©2003 Micron Technology, Inc.
DON’T CARE
NOTES
1
1
1
1