MT58L1MY18P Micron Semiconductor Products, Inc., MT58L1MY18P Datasheet - Page 9

• Manufacturer Part Number: MT58L1MY18P
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Scd,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 2:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, SCD SyncBurst SRAM
MT58L1MY18P1_16_D.fm – Rev. D, Pub 2/03
SYMBOL
NF/DQPb
NF/DQPd
NF/DQPa
NF/DQPc
V
TDO
V
V
NC
DD
NF
DD
SS
Q
FBGA Ball Descriptions (continued)
Output IEEE 1149.1 test outputs: JEDEC-standard 3.3V or 2.5V I/O levels.
Supply
Supply
Supply
TYPE
NF
I/O
–
–
No Function/Parity Data I/Os: On the x32 version, these pins are No Function (NF). On the x18
version, byte “a” parity is DQPa; byte “b” parity is DQPb. On the x36 version, byte “a” parity is
DQPa; byte “b” parity is DQPb; byte “c” parity is DQPc; byte “d” parity is DQPd.
Power Supply: See DC Electrical Characteristics and Operating Conditions for range.
Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for
range.
Ground: GND.
No Connect: These balls are not internally connected to the die. They may be left floating,
driven by signals, or connected to ground to improve package heat dissipation.
No Function: These balls are internally connected to the die and have the capacitance of an
input pin. They may be left floating, driven by signals, or connected to ground to improve
package heat dissipation.
9
PIPELINED, SCD SYNCBURST SRAM
18Mb: 1 MEG x 18, 512K x 32/36
DESCRIPTION
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.