BSP090 Philips Semiconductors (Acquired by NXP), BSP090 Datasheet - Page 5

• Manufacturer Part Number: BSP090
• Description: P-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
1997 Mar 13
V
V
I
I
R
C
C
C
Q
Q
Q
t
t
t
t
t
t
Source-drain diode
V
t
SYMBOL
j
DSS
GSS
d(on)
r
on
d(off)
f
off
rr
= 25 C; unless otherwise specified.
(BR)DSS
GSth
SD
P-channel enhancement mode vertical
D-MOS transistor
DSon
iss
oss
rss
g
gs
gd
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
turn-on delay time
rise time
turn-on switching time
turn-off delay time
fall time
turn-off switching time
source-drain diode forward voltage
reverse recovery time
PARAMETER
V
V
V
V
V
V
V
V
V
V
I
V
I
V
I
V
I
V
I
V
I
V
I
V
I
V
I
V
I
D
D
D
D
D
D
D
D
D
S
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GD
= 2.8 A; T
= 2.8 A; T
= 2.8 A; T
= 1 A; R
= 1 A; R
= 1 A; R
= 1 A; R
= 1 A; R
= 1 A; R
= 1.25 A; di/dt = 100 A/ s
= 4.5 V; I
= 10 V; I
= 0; V
= 0; V
= 0; V
= 10 V; V
= 10 V; V
= 10 V; V
= 0 to 10 V; V
= 0 to 10 V; V
= 0 to 10 V; V
= 10 to 0 V; V
= 10 to 0 V; V
= 10 to 0 V; V
= 0; I
= V
= 0; V
= 20 V; V
= 0; I
5
DS
D
S
CONDITIONS
DS
DS
DS
DS
; I
= 1.25 A
= 10 A
L
L
L
L
L
L
D
amb
amb
amb
= 15 ; R
= 15 ; R
= 15 ; R
= 15 ; R
= 15 ; R
= 15 ; R
= 24 V; f = 1 MHz
= 24 V; f = 1 MHz
= 24 V; f = 1 MHz
= 24 V
D
= 1 mA
D
DD
DD
DD
DS
= 2.8 A
= 1.4 A
= 25 C
= 25 C
= 25 C
= 15 V;
= 15 V;
= 15 V;
= 0
DD
DD
DD
DD
DD
DD
= 15 V;
= 15 V;
= 15 V;
= 15 V;
= 15 V;
= 15 V;
gen
gen
gen
gen
gen
gen
= 6
= 6
= 6
= 6
= 6
= 6
MIN.
30
1
800
400
100
21
2.5
6
6
6
12
55
40
95
70
TYP.
Product specification
0.15
0.09
25
190
MAX.
BSP090
2.8
500
100
1.3
V
V
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
ns
UNIT