BSP106 Philips Semiconductors (Acquired by NXP), BSP106 Datasheet - Page 3

• Manufacturer Part Number: BSP106
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm;
April 1995
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
D
DM
V
stg
j
DS
DG
tot
th j-a
N-channel enhancement mode vertical
D-MOS transistor
GSO
mounting pad for the drain lead minimum 6 cm
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
drain current
total power dissipation
storage temperature range
junction temperature
from junction to ambient
(note 1)
PARAMETER
PARAMETER
2
.
3
DC value
peak value
up to T
(note 1)
amb
CONDITIONS
= 25 C
83.3
MIN.
55
VALUE
Product specification
60
60
20
425
850
1.5
150
150
MAX.
BSP106
K/W
UNIT
V
V
V
mA
mA
W
UNIT
C
C