BSP75-AE6327 Infineon Technologies Corporation, BSP75-AE6327 Datasheet

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BSP75-AE6327

Manufacturer Part Number
BSP75-AE6327
Description
HitFET Smart Low Side Power Switch
Manufacturer
Infineon Technologies Corporation
Datasheet
Smart Lowside Power Switch
Features
Application
General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.
Semiconductor Group
Logic Level Input
Input protection (ESD)
Thermal shutdown (with restart)
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
All kinds of resistive, inductive and capacitive loads in switching applications
Replaces electromechanical relays and discrete circuits
C compatible power switch for 12 V and 24 V DC applications
1
IN
HITFET
ESD
TAB
Pin
1
2
3
limitation
dv/dt
SUBSTRATE
SOURCE
Symbol
DRAIN
IN
temperature
protection
Product Summary
Continuous drain source voltage V
On-state resistance
Current limitation
Load current (ISO)
Clamping energy
Over-
4
Page 1 of 9
Overvoltage
Short circuit
protection
Short circuit
protection
protection
limitation
Current
Internally connected to source (pin 3)
Output to the load
Function
Source
Ground
Drain
Input
LOAD
3
2
R
I
I
E
V bb
D(lim)
D(ISO)
HITFET ® BSP 75A
DS
AS
DS(ON)
+
1998-11-25
550
550
0.7
55
1
M
m
mJ
V
A
A

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BSP75-AE6327 Summary of contents

Page 1

Smart Lowside Power Switch Features Logic Level Input Input protection (ESD) Thermal shutdown (with restart) Overload protection Short circuit protection Overvoltage protection Current limitation Application All kinds of resistive, inductive and capacitive loads in switching applications C compatible power switch ...

Page 2

Maximum Ratings =25°C unless otherwise specified Parameter Continuous drain source voltage (overvoltage protection see page 4) Drain source voltage for short circuit protection Load dump protection V LoadDump =400ms; IN=low or ...

Page 3

Electrical Characteristics Parameter and Conditions °C, unless otherwise specified j Static Characteristics Drain source clamp voltage Off state drain current Input ...

Page 4

Parameter and Conditions °C, unless otherwise specified j Protection Functions Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive energy I =0 =32 V D(ISO) bb Inverse Diode Continuous source drain voltage V ...

Page 5

Block diagram Terms HITFET V IN Input circuit (ESD protection) IN ESD-ZD I Source ESD zener diodes are not designed for DC current. Semiconductor Group Inductive and overvoltage output clamp ...

Page 6

Maximum allowable power dissipation tot C P [W] tot 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 On-state resistance 0.7 A; ...

Page 7

Typ. on-state resistance 0 25° 2000 1500 1000 500 Typ. short circuit current ...

Page 8

Application examples: Status signal of thermal shutdown by monitoring input current Semiconductor Group HITFET µC µ thermal shutdown Page 8 HITFET ® BSP 75A 1998-11-25 ...

Page 9

... Package and ordering code all dimensions in mm SOT223/4 BSP75 Definition of soldering point with temperature T upper side of solder edge of device pin 4. Pin 4 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, The information describes a type of component and shall not be considered as warranted characteristics ...

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