BSP75-AE6327 Infineon Technologies Corporation, BSP75-AE6327 Datasheet - Page 4

• Manufacturer Part Number: BSP75-AE6327
• Description: HitFET Smart Low Side Power Switch
• Manufacturer: Infineon Technologies Corporation

Protection Functions
Inverse Diode
The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level
input, an open drain DMOS output stage and integrated protection functions. It is designed
for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial ap-
plications.
Protection functions
The device is ESD protected according Human Body Model (4 kV) and load dump protected
(see Maximum Ratings).
Semiconductor Group
Parameter and Conditions
at T
Thermal overload trip temperature
Thermal hysteresis
Unclamped single pulse inductive energy
I
Continuous source drain voltage
V
D(ISO)
IN
Overvoltage protection: An internal clamp limits the output voltage at V
63 V) when inductive loads are switched off.
Current limitation: By means of an internal current measurement the drain current is lim-
ited at I
linear region, so power dissipation may exceed the capability of the heatsink. This opera-
tion leads to an increasing junction temperature until the overtemperature threshold is
reached.
Overtemperature and short circuit protection: This protection is based on sensing the
chip temperature. The location of the sensor ensures a fast and accurate junction tem-
perature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of
typ. 10 K enables an automatical restart by cooling.
j
= 0 V, -I
= 25 °C, unless otherwise specified
=0.7 A, V
D(lim)
D
= 2*0.7 A
(1.4 - 1.5 A typ.). If the current limitation is active the device operates in the
bb
=32 V
Circuit Description
T j =150 °C
Page 4
T j =25 °C
T
E
V
Symbol
jt
T
AS
SD
jt
150
550
200
min
--
--
HITFET ® BSP 75A
Values
165
typ
10
--
--
1
DS(AZ)
max
1998-11-25
--
--
--
--
--
(about
Unit
mJ
°C
K
V