BSP752-T Infineon Technologies Corporation, BSP752-T Datasheet

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BSP752-T

Manufacturer Part Number
BSP752-T
Description
Inexpensive High Side Switches
Manufacturer
Infineon Technologies Corporation
Datasheet
Smart Power High-Side-Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• CMOS compatible input
• Loss of GND and loss of V
• ESD - Protection
• Very low standby current
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS
protection functions.
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V, 24 V and 42 V DC applications
• Replaces electromechanical relays and discrete circuits
bb
protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Nominal load current
Page 1
technology. Fully protected by embedded
V
V
R
I
L(nom)
bb(AZ)
bb(on)
ON
2003-06-23
BSP 752 T
6...52 V
200
1.3
62
V
mΩ
A

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BSP752-T Summary of contents

Page 1

Smart Power High-Side-Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown with restart • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • CMOS ...

Page 2

Block Diagram Voltage Overvoltage source protection V Logic Charge pump Level shifter Rectifier IN Logic ESD Pin Symbol GND OUT Vbb 5 Vbb 6 Vbb 7 Vbb 8 Pin configuration Top view 1 • ...

Page 3

Maximum Ratings 25°C, unless otherwise specified j Parameter Supply voltage Supply voltage for full short circuit protection Continuous input voltage Load current (Short - circuit current, see page 5) Current through input pin (DC) Operating temperature Storage ...

Page 4

Electrical Characteristics Parameter and Conditions -40...+150° 12..42V Load Switching Capabilities and Characteristics On-state resistance = 25 ° 9... 150 °C T ...

Page 5

Electrical Characteristics Parameter and Conditions -40...+150° 12..42V Protection Functions Initial peak short circuit current limit (pin -40 ° ...

Page 6

Electrical Characteristics Parameter and Conditions -40...+150° 12..42V Input Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current state input current V ...

Page 7

Terms PROFET V IN GND GND R GND Input circuit (ESD protection ESD GND The use of ESD zener diodes as voltage clamp ...

Page 8

GND disconnect PROFET GND GND GND disconnect with GND pull OUT PROFET GND GND disconnect with charged inductive load high OUT ...

Page 9

Typ. transient thermal impedance 6cm heatsink area thJA p Parameter: D D=0.5 K/W D=0.2 D=0 D=0.05 D=0. D=0.01 D ...

Page 10

Typ. turn on time 47Ω 160 µs 120 100 -40 - Typ. slew rate Ω dV/dt = f(T ) ...

Page 11

Typ. standby current 42V ; V bb(off µ -40 - Typ. initial peak short circuit current limit I = f(V ) L(SCp) ...

Page 12

Typ. input current 13,5V; V IN(on/off ≤ 0,7V low high 12 µ -40 - Typ. input threshold ...

Page 13

Maximum allowable load inductance for a single switch off =150°C, R =0Ω L jstart L 2000 mH 1600 1400 1200 1000 800 600 42V 400 13,5V 200 0 0 0.25 0.5 0.75 Maximum allowable inductive ...

Page 14

Timing diagrams Figure 1a: Vbb turn on OUT Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition ...

Page 15

Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling L(SCp) I L(SCr off(SC) Heating up of the chip may require several milliseconds, depending on external conditions. Figure 4: ...

Page 16

Package and ordering code all dimensions in mm Package: Ordering code: P-DSO-8-6 Q67060-S7307 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain ...

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