BSP77 Infineon Technologies Corporation, BSP77 Datasheet

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BSP77

Manufacturer Part Number
BSP77
Description
Fully Protected Switch
Manufacturer
Infineon Technologies Corporation
Datasheet
Features








Application



Smart Lowside Power Switch
General Description
N channel vertical power FET in Smart SIPMOS
protection functions.
Logic Level Input
Input Protection (ESD)
Thermal shutdown with
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
All kinds of resistive, inductive and capacitive loads in switching
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
auto restart
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Page 1
Short circuit
Protection
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy

technology. Fully protected by embedded
HITFET
Source
    = = = =
Drain
II.Generation BSP 77
Pin 2 and 4 (TAB)
V
4
Pin 3
bb
V
R
I
E
D(Nom)
DS
AS
DS(on)
1
2001-07-20
2.17
100
250
42
2
VPS05163
M
V
m
A
mJ

3

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BSP77 Summary of contents

Page 1

Smart Lowside Power Switch Features Logic Level Input  Input Protection (ESD)  Thermal shutdown with  auto restart Overload protection  Short circuit protection  Overvoltage protection  Current limitation  Analog driving possible  Application All kinds of ...

Page 2

Maximum Ratings 25°C, unless otherwise specified j Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current -0.2V V 10V   IN V < -0. > 10V IN IN Operating ...

Page 3

Electrical Characteristics Parameter 25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150 Off-state drain current T = -40 ... +150° ...

Page 4

Electrical Characteristics Parameter 25°C, unless otherwise specified j Dynamic Characteristics Turn-on time Turn-off time V to 10% I ...

Page 5

Block diagram Terms ITFET Input circuit (ESD protection) Input Inductive and overvoltage output clamp V bb Short circuit behaviour Gate Drive Source/ ...

Page 6

Maximum allowable power dissipation P = f(T ) resp. tot f =72 K/W tot A thJA max 6cm2 1 0 -75 -50 -25 0 ...

Page 7

Typ. transfer characteristics I =f =12V Jstart Typ. output characteristics I =f =25° Jstart ...

Page 8

Typ. overload current I = f(t heatsink D(lim) bb Parameter: T jstart 25 A -40°C 25° +150°C 85° Determination of I D(lim f(t ...

Page 9

Package Ordering Code SOT-223 Q67060-S7202-A2 6.5 ±0 ±0 +0.2 acc. to DIN 6784 2.3 0.7 ±0.1 4.6 0. 1.6 ±0.1 0.1 max 0. GPS05560 Page 9 BSP 77 2001-07-20 ...

Page 10

Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...

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